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www.irf.com 1 07/10/09 IRF8707GPBF hexfet power mosfet notes through are on page 9 benefits very low gate charge very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current 20v v gs max. gate rating 100% tested for rg lead-free halogen-free applications control mosfet of sync-buck converters used for notebook processor power control mosfet for isolated dc-dc converters in networking systems top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 v dss r ds(on) max qg 30v 11.9m @v gs = 10v 6.2nc description the IRF8707GPBF incorporates the latest hexfet power mosfet silicon technology into the industry standard so-8 package. the IRF8707GPBF has been optimized for parameters that are critical in synchronous buck operation including rds(on) and gate charge to reduce both conduction and switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors for notebook and netcom applications. absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w v a w c max. 11 9.1 88 20 30 -55 to + 150 2.5 0.02 1.6
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c r ds(on) static drain-to-source on-resistance ??? 9.3 11.9 ??? 14.2 17.5 v gs(th) gate threshold voltage 1.35 1.80 2.35 v ? v gs(th) gate threshold voltage coefficient ??? -5.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 25 ??? ??? s q g total gate charge ??? 6.2 9.3 q gs1 pre-vth gate-to-source charge ??? 1.4 ??? q gs2 post-vth gate-to-source charge ??? 0.7 ??? q gd gate-to-drain charge ??? 2.2 ??? q godr gate charge overdrive ??? 1.9 ??? see figs. 15 & 16 q sw switch char g e (q gs2 + q gd ) ??? 2.9 ??? q oss output charge ??? 3.7 ??? nc r g gate resistance ??? 2.2 3.7 ? t d(on) turn-on delay time ??? 6.7 ??? t r rise time ??? 7.9 ??? t d(off) turn-off delay time ??? 7.3 ??? t f fall time ??? 4.4 ??? c iss input capacitance ??? 760 ??? c oss output capacitance ??? 170 ??? c rss reverse transfer capacitance ??? 82 ??? avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? (body diode) i sm pulsed source current ??? ??? ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 12 18 ns q rr reverse recovery charge ??? 13 20 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions see fig. 18 max. 53 8.8 ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 11a mosfet symbol v ds = v gs , i d = 25a v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 8.8a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v t j = 25c, i f = 8.8a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 8.8a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 8.8a v gs = 4.5v typ. ??? v ds = v gs , i d = 25a r g = 1.8 ? v ds = 15v, i d = 8.8a v ds = 24v, v gs = 0v, t j = 125c a na i d = 8.8a v gs = 0v v ds = 15v nc ns pf m ? a 3.1 88 a ??? www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 11a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60s pulse width tj = 25c 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.3v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec 012345678 q g , total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 8.8a www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) ri (c/w) i (sec) 2.2284 0.000169 7.0956 0.013738 25.4895 0.68725 15.1981 25.8 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 notes: 1. duty factor d = t / t 2 . peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.3 1.6 1.9 2.2 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a 6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 15. gate charge test circuit 1k vcc dut 0 l s 20k fig 14. unclamped inductive test circuit and waveform t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 11a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.67a 0.82a bottom 8.80a www.irf.com 7 fig 17. for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? !"!! ? # $$ ? !"!!%" fig 18b. switching time waveforms fig 18a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f &' 1 ( # 0.1 % + - 8 www.irf.com so-8 package outline (mosfet & fetky) !" ## $%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ |